A 1,4-diamino-2,3-disila-1,3-butadiene derivative of composition (Me2-cAAC)2(Si2Cl2) (Me2-cAAC = :C(CMe2)2(CH2)N-2,6-iPr2C6H3) was synthesized by reduction of the Me2-cAAC:SiCl4 adduct with KC8. This compound is stable at 0 °C for 3 months in an inert atmosphere. Theoretical studies reveal that the silicon atoms exhibit pyramidal coordination, where the Cl-Si-Si-Cl dihedral angle is twisted by ...

Complexes featuring lanthanide (Ln)-Si bonds represent a highly neglected research area. Herein, we report a series of open-shell Ln(II+) and Ln(III+) complexes bearing σ-bonded silyl and base-stabilized N-heterocyclic silylene (NHSi) ligands. The reactions of the Ln(III+) complexes Cp3Ln (Ln = Tm, Ho, Tb, Gd; Cp = cyclopentadienide) with the 18-crown-6 (18-cr-6)-stabilized 1,4-oligosilanyl dia...

In Section 3 we showed that our method can have more power to detect o-eSNPs. Here we discuss its power to detect SNPs whose functional mechanisms have non-regulatory components. For simplicity we again consider only continuous Yi, Gi, and a single SNP Si in the ordinary linear model, where the variables have all been centered. We now consider the outcome model Yi = G T i αG + αSSi + i1, where ...

The reaction rate of vacuum-evaporated films of V of the order of I 000 A thick is investigated by MeV He backscattering spectrometry. On substrates of single-crystal Si and for anneal times up to several hours in the temperature range 570--650 ·c, VSi 2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significa...

Crystallization of diamond in the Mg-Si-C system has been studied at 7.5 GPa and 1800 ◦C with the Mg-Si compositions spanning the range from Mg-C to Si-C end-systems. It is found that as Si content of the system increases from 0 to 2 wt %, the degree of the graphite-to-diamond conversion increases from about 50 to 100% and remains at about this level up to 20 wt % Si. A further increase in Si c...

Introduction: The presence and amount of Si in Earth's core has important implications for models of the processes and chemistry of core segregation. A metal core containing 5 to 7 wt. % Si can be produced when assuming continuous accretion and equili-bration along the silicate liquidus terminating at ~35 GPa and ~3,000 K, and with a concomitant increase in fO 2 from 4 to 2 log units below IW [...

The chemisorption of bis~trimethylsilyl!methane ~BTM, CH2@Si~CH3!3#2! and dodecamethylcyclohexasilane ~DCS, Si6~CH3!12! on clean Si~100! surfaces has been studied by C 1s core-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a –CH2Si~CH3!3 surface moiety for room-temperature adsorption, which further decomposes upon ann...