Indium oxide (In2O3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In2O3 and active carbon. The Schottky contact between the In2O3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In2O3 nanotower Schottky diode, and the...

Temperature-dependent current-voltage measurements combined with conductive atomic force microscopy and analytical modeling have been used to assess possible mechanisms of reverse-bias leakage current flow in Schottky diodes fabricated from GaN and Al0.25Ga0.75N/GaN structures grown by molecular-beam epitaxy. Below 150 K, leakage current is nearly independent of temperature, indicating that con...

To improve the performance of metalorganic chemical vapor deposition (MOCVD)-grown long wavelength InGaAsN quantum well (QW) diode lasers emitting beyond 1.3 mm, a detailed examination of the growth parameters was performed, including DMHy/V ratio, QW growth temperature, choice of barrier material and thermal annealing temperature. This study reveals that a growth temperature in the 530–540 1C ...

This paper reports the design, fabrication and characterization of high voltage 4H-SiC merged PiN/Schottky-barrier (MPS) diodes with an active area of 1.4mm. For comparison purposes, Schottky barrier, PiN and MPS diodes of smaller size (8.1x10mm) have also been designed and fabricated on the same wafer with a 30μm, n=2x10cm doped drift layer. The Schottky spacing between the adjacent p+ regions...

We demonstrate an Nb$_{2}$O$_{5}$/$\beta$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced breakdown characteristics compared to a $\beta$-Ga$_{2}$O$_{3}$ Schottky barrier diode. The films were grown using atomic layer deposition and exhibited high ...

In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...

This paper summarizes the development of novel Schottky-diode-based terahertz frequency multipliers. The basic structure and manufacturing process planar Schottky barrier diodes (SBDs) are reviewed, along with other diode structures that have been proposed in literature. A numerical modeling method for context multipliers is presented, which includes 3D electromagnetic (EM) modeling, electro-th...

Background and Aim: Diode laser is a great choice for soft tissue surgery. The diode laser is partially absorbed by hard dental tissues, making it safe for soft tissue surgery. This study aimed to compare the tissue thermal changes induced by three types of diode lasers at 810, 940, and 980nm wavelengths. Materials and Methods: In this in-vitro experimental study, using a diode laser device (c...