نتایج جستجو برای: semiconductor metal boundary
تعداد نتایج: 405674 فیلتر نتایج به سال:
A new approach to the formation of a 1D planar periodicity on the front of a plasmonic photodetector based on Schottky barrier is proposed. It allows forming a 1D planar periodicity with corrugation at the "metal/environment" interface by laser interference lithography using embedded chalcogenide wires, whereas the "metal/semiconductor" interface is flat that leads to reducing of surface recomb...
This paper describes how the concepts of Charge Neutrality Level (CNL) and Induced Density of Interface States (IDIS) can successfully explain the energy level alignment at metal-organic and organic-organic interfaces. We propose that the CNL acts as an effective Fermi level for the organic semiconductor: its partial alignment with the metal Fermi level (in the case of metal-organic interfaces)...
Agarose, a naturally occurring biopolymer is used for the stabilization of metal, semiconductor nanoparticles. Ag and Cu nanoparticles stabilized in agarose matrix show excellent antibacterial activity against E. coli bacteria. The well dispersed metal nanoparticles within the agarose composite films can be readily converted to carbon–metal composites of catalytic importance.
We have revealed practical charge injection at metal and organic semiconductor interface in organic field effect transistor configurations. We have developed a facile interface structure that consisted of double-layer electrodes in order to investigate the efficiency through contact metal dependence. The metal interlayer with few nanometers thickness between electrode and organic semiconductor ...
The complementary optical properties of metal and semiconductor nanostructures make them attractive components for many applications that require controlled flow of electromagnetic energy on the nanometer length scale. When combined into heterostructures, the nanometer-scale vicinity of the two material systems leads to interactions between quantum-confined electronic states in semiconductor na...
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This paper presents the concept and experimental evidence for nonthermal equilibrium (NTE) process of charge carrier extraction in metal/insulator/organic semiconductor/metal (MIOM) capacitors. These capacitors are structurally similar to metal/insulator/semiconductor/(metal) (MIS) found standard semiconductor textbooks. The difference between two is that (organic) contacts MIOM Schottky type, ...
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