نتایج جستجو برای: semiconductor junction

تعداد نتایج: 110404  

2014
H. Holmberg N. Lebedeva S. Novikov J. Ikonen P. Kuivalainen M. Malfait V. V. Moshchalkov

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

2005
H. Holmberg N. Lebedeva S. Novikov J. Ikonen P. Kuivalainen M. Malfait V. V. Moshchalkov

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

2009
Adrian RUSU Constantin BULUCEA

The gate-controlled diode (or gated diode) is a semiconductor device that combines the function of a p-n junction and a MOS capacitor [1, 2]. The schematic cross-section structure is shown in figure 1. The terminals of the junction are noted A (anode) and K (cathode), while the control electrode is the gate G. The voltage across the p-n junction working in avalanche breakdown regime has the abs...

Journal: :Coatings 2023

We investigate theoretically the Josephson current through one semiconductor quantum dot (QD) coupled to triple nanowires (junctions) with Majorana bound states (MBSs) prepared at their ends. find that not only strength but also period of flowing between left and right junctions via can be fully controlled in terms third junction side-coupled QD. When phase factor is zero junction, which acts a...

Journal: :Silicon 2021

For the last few decades scientists across world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable fabrication these cells. Back 1970s proposed an alternative cell with Schottky barrier which can cut down burden on thermal budget manufacturing process. Later metal-semiconductor fu...

2009
R. Hui I. Maio I. Montrosset

Semiconductor laser amplifiers have been subject of great interest for several years now. Travelling wave semiconductor laser amplifiers have recently been implemented in optical fibre communication systems as optical repeaters and optical preamplifiers. Automatic gain control (AGC) of laser amplifiers is required in more reliable optical communication systems to compensate for the effect relat...

Journal: :Advanced Materials 2021

Superconductor–semiconductor–superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well future high-performance low power dissipating nanoelectronic and devices. In this work, ultrascaled monolithic Al–Ge–Al nanowire featuring monocrystalline Al leads abrupt metal–semiconductor interfaces used to probe the low-tempe...

2005

Chemist, led the research for the molecular diode (In the semiconductor industry, called p-n junctions)

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید