For a two-dimensional electron gas with Coulomb interaction, we have applied the Kadanoff-Baym-Keldysh approach to calculate numerically equilibrium Green’s functions at finite temperatures. The method used is based on iterative numerical computation of the retarded self-energy in the self-consistent random-phase approximation approximation. We have computed electron distribution, quasiparticle...

The quark-meson coupling model, based on a mean field description of nonoverlapping nucleon bags bound by the self-consistent exchange of σ, ω and ρ mesons, is extended to investigate the properties of finite nuclei. Using the BornOppenheimer approximation to describe the interacting quark-meson system, we derive the effective equation of motion for the nucleon, as well as the self-consistent e...

The theoretical concepts for the renormalization of self-consistent Dyson resummations, deviced in the first paper of this series, are applied to first example cases for the φ-theory. Besides the tadpole (Hartree) approximation as a novel part the numerical solutions are presented which includes the sunset self-energy diagram into the self-consistent scheme based on the Φ-derivable approximatio...

theoretically predictionq of the solvent effects of i - pentadecanoyl - 2 -docosahexaennyl - sn - glycerol3 - phosphocholin have been studied using 'jamey-lock quantiun chemical approximation and std - 30basis set within the onsager self-consistent reaction field (scrs') model all optimized conformers of i -pentadecanoyl - 2 -docosahexaenoyi - sn - glycerol 3 - phosphocholin as well as their to...

Abstract Fractional order controllers become increasingly popular due to their versatility and superiority in various performances. However, the bottleneck deploying these tools practice is related analog or numerical implementation. Numerical approximations are usually employed which approximation of fractional differintegrator foundation. Generally, following three identical equations always ...

Surface-potential-based MOSFETmodeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-diffusion approximation and charg...