Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driv...

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

In a high-vacuum diode, the volt-ampere characteristic of thermionic emission Na+ with surface NaxAu intermetallide. Its hysteresis was found, which is associated changes in caused by action an external electric field. accordance Schottky effect, analysis current–voltage and value work function estimated. Suggested mechanism from NaxAu.

Electronic control of microwave antennas and circuits is usually based on the use of reverse biased semiconductor junctions. Optical control of such circuits has been by directly illuminating the active (depletion) regions of the semiconductor junctions. In this paper we report indirect optical control of microwave antennas and circuits using a photovoltaic array that generates a light dependen...

PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metalsemiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of th...

PURPOSE To experimentally verify the feasibility of focused heating in the neck region by an array of two rings of six electromagnetic antennas. We also measured the dynamic specific absorption rate (SAR) steering possibilities of this setup and compared these SAR patterns to simulations. METHODS AND MATERIALS Using a specially constructed laboratory prototype head-and-neck applicator, includ...

Low power microwave energy harvesting rectennas have been simulated from 0.1 to 100 GHz. Comparison of previously published configurations, and selection between two widely used Schottky diodes and one promising commercially available Schottky diode, has been performed to evaluate efficiency across the range of frequencies. Analysis from our results give, for the first time, a clear explanation...

Organic solar cells (OSCs) have attracted great attention in the past 30 years, and the power conversion efficiency (PCE) now reaches around 10%, largely owning to the rapid material developments. Meanwhile with the progress in the device performance, more and more interests are turning to understanding the fundamental physics inside the OSCs. In the conventional bulk-heterojunction architectur...

This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baliga’s equations have shown to be higher than other estimation techniques and simulation results, especially for voltages higher than 5kV. This pape...

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...