An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calc...

The scalability of thin-film transistors has been well documented, but there have been very few investigations into of the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150 and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness c...

We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100­200°C for 30 s under N2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing ...

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High curren...

This article studies the sub-linearity of output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that not due to forward-biased Schottky diode at drain contact interface but bias impact on source-side Schottky-barrier, resulting an increased carrier injection increasing drain–source voltage. The simula...

Four compositions of austenitic Mn-Cr steels have been developed successfully for in-vessel component materials in power plant industry. The phase stability of these Mn-Cr steels was studied by and X-ray diffraction (XRD) patterns. XRD patterns have shown that the matrix of these Mn-Cr steels is a single γ-phase structure. The potentiodynamic polarisation curves suggested that these fabricated ...

We give an explicit weak solution to the Schottky problem, in spirit of Riemann and Schottky. For any genus $g$, we write down a collection polynomials $g$ theta constants, such that their common zero locus contains Jacobians curves as irreducible component. These arise by applying specific Schottky-Jung proportionality quartic identities for constants $g-1$, which are suitable linear combinati...

The influence of rapid thermal annealing effect on the electrical and structural properties of Au/Cu Schottky contacts on n-InP has been investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and the X-ray diffraction (XRD) techniques. As-deposited sample has a barrier height of 0.64 eV (IV), 0.76 eV (C-V) which increases to 0.82 eV (I-V), 1.04 e...

Exact bounds for the positions of the branch points for cyclic coverings of the p-adic projective line by Mumford curves are calculated in two ways. Firstly, by using Fumiharu Kato’s ∗-trees, and secondly by giving explicit matrix representations of the Schottky groups corresponding to the Mumford curves above the projective line through combinatorial group theory.