Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50μm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 2008 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (230.2090) Electro-optical devices; (230.4110) Modulators

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as...

The impact of forces due to the difference in mechanical stresses between the Schottky contacts and passivation films on the electrical properties of (0001) AlGaN/GaN Schottky diodes is numerically analyzed in the framework of the edge force model. The compressive (tensile) passivation films induce negative (positive) piezoelectric charges below the Schottky contacts in the GaN channels and bri...

The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...

In 1918 Schottky discovered that the fluctuations in vacuum diodes can be related to the discrete nature of the charge carriers [1]. His observation was that the power spectrum of the current fluctuations gave direct access to the charge e of the discrete carriers responsible for the current. From his theoretical considerations he found a relation between the noise power of the current fluctuat...

In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal–metal, metal–semiconductor, and semiconductor– semiconductor junctions are all...

The simulated characterisation and tuning of prototype antennas prior to manufacture is described in this article. The antennas incorporate Schottky diodes so as to frequency triple incident subTHz power. Such a dual frequency, nonlinear, device has been called a multenna. A metrology is outlined for ease of multiple measurements to permit exploring scenarios of multenna element design. Four op...

We describe the design, fabrication, and characterization of superconducting 1n0.47 GaO.53 As junction field-eftect transistors (JFETs) with Nb source and drain electrodes. In0.47 GaO.5 , As has the advantage of combining large coherence length and high Schottky barrier transmission. making it a very attractive material on which to base superconducting FETs. At large voltages these devices beha...

Though millimeter wave applications have attracted much attention in recent years, they have not yet been put to practical use. The major reason for the failure may be a large transmission loss peculiar to the short wavelength. In order to overcome the inconvenience, it may be promising to introduce the technology of millimeter-wave NRD-guide circuits. In this technology, not only NRD-guide but...

By an analysis of the exchange of carriers through a semiconductor junction, a general relationship for the nonequilibrium population of the interface states in Schottky barrier diodes has been derived. Based on this relationship, an analytical expression for the ideality factor valid in the whole range of applied bias has been given. This quantity exhibits two different behaviours depending on...