In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standa...

The quantal release of oxidizable molecules can be successfully monitored by means of polarized carbon fiber microelectrodes (CFEs) positioned in close proximity to the cell membrane. To partially overcome certain CFE limitations, mainly related to their low spatial resolution and lack of optical transparency, we developed a planar boron-doped nanocrystalline diamond (NCD) prototype, grown on a...

Hexagonal GaN microprism structures were fabricated by pulsed selective epitaxial growth (SEG) under conditions that suppressed lateral overgrowth. Unlike previously reported pulsed SEG processes in which the precursor gas flow was modulated by valves, the approach reported here utilizes a flow geometry that produces a significant deposition rate only over the downstream portion of the 2 in waf...

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO...

The use of wide bandgap materials for broadcast telecommunication and defense systems allow high power, high efficiency and high integration levels of active devices thanks to their microwave electrical performances. GaN based devices have also demonstrated great potential for high frequency linear low noise applications. However, low frequency noise (LFN) performances characteristics are still...

Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparat...

A submicrometer-thick zirconium dioxide film was deposited on the tip of a polished C-plane sapphire fiber to fabricate a temperature sensor that can work to an extended temperature range. Zirconium dioxide was selected as the thin film material to fabricate the temperature sensor because it has relatively close thermal expansion to that of sapphire, but more importantly it does not react appre...

Infrared-visible sum-frequency-generation spectroscopy (SFG) is used to investigate the interfacial structure of hexadecanol (C16H33OH) and heneicosane (C21H44) in contact with polystyrene films (PS) spin coated on a sapphire substrate. The interfacial structure of hexadecanol is very different from heneicosane in contact with PS. In the crystalline state, the hexadecanol molecules are oriented...

Rapid development in VLSI Technology anticipates an urgent need for new micro cooling strategies for high heat flux electronic chips. This paper presents a novel high efficiency micropump/evaporator, based on electrohydrodynamic (EHD) forces, high heat flux electronic sensors. The device incorporates a MEMS-based active micro-evaporative surface and temperature sensors into a single package tha...