The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large fo...

We present an escape rate theory for current-induced chemical reactions. We use Keldysh nonequilibrium Green's functions to derive a Langevin equation for the reaction coordinate. Due to the out of equilibrium electronic degrees of freedom, the friction, noise, and effective temperature in the Langevin equation depend locally on the reaction coordinate. As an example, we consider the dissociati...

The measured I –V data and the large-signal equivalent circuit of a resonant tunneling diode are exploited, through the analog behavioral modeling capabilities of Pspice, to create a Pspice compatible model for the diode. The model is used, with very few other components, in the simulation of a number of circuit applications including a sinusoidal wave generator, a frequency multiplier and thre...

One of major implementations of Linear Threshold Gate (LTG) is via resonant tunneling diodes (RTD). The functionality of this threshold logic gate greatly depends on the parameters of the RTD and parametric faults impact its functionality. A suitable fault model for Combinational Threshold Logic gates is presented. A methodology is also developed to generate test patterns that detect these para...

We report 56% efficient external cavity resonant second harmonic generation of a diode-laser pumped, CW single-axial-mode Nd :YAG laser. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO : LiNb03. The best conversion efficiency was obtained with a 12.5 mm long monolithic ring cavity doubler,...

A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of 111-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode(RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In,Gal-,As/AIAs RTDs suita...