The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700 ° C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . ...

Luminescent silicon-rich nitride/silicon superlattice structures SRN/Si-SLs with different silicon concentrations were fabricated by direct magnetron cosputtering deposition. Rapid thermal annealing at 700 °C resulted in the nucleation of small amorphous Si clusters that emit at 800 nm under both optical and electrical excitations. The electrical transport mechanism and the electroluminescence ...

Recent efforts have demonstrated enhanced tailoring of material functionality with mixed anion materials, yet exploratory research with mixed anion chemistries is limited by the sensitivity of these materials to synthesis conditions. Synthesis of a particular metal oxynitride compound by traditional reactive annealing requires specific, limited ranges of both oxygen and nitrogen chemical potent...

XPS depth profiles were used to investigate the effects of rapid thermal annealing under varying conditions on the structural, magnetic and optical properties of Ni-doped ZnO thin films. Oxidization of metallic Ni from its metallic state to two-valence oxidation state occurred in the film annealed in air at 600 C, while reduction of Ni2þ from its two-valence oxidation state to metallic state oc...

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 1C with arsenic (As) and phosphorus (P) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 71. Compared with impurity-free induced intermixing, the intermixing degree is significantly ...

In this report, the micron-long Si nanowires (NWs) array is grown by a metal assisted chemical etching (MACE) process using Ag as the noble metal catalyst in HF/H2O2 solution. These Si NWs are decorated with arbitrary shaped ultrasmall Si nanocrystals (NCs) due to the side wall etching of the Si NWs. The MACE grown samples exhibit strong PL emission in the visible region and quantum confinement...

“Model on Demand” (MoD) simulation of the temperature dynamics in a simulated Rapid Thermal Processing (RTP) reactor is compared against various types of global models (ARX, semiphysical, combined semiphysical with neural net). The identification data is generated from a m-level pseudo-random sequence input whose parameters are specified systematically using a priori information readily availab...

Rapid thermal processing (RTP) is a new technique for performing various wafer fabrication operations such as annealing, oxidation and chemical vapor deposition in a single chamber. The success of the RTP depends on the precise control of wafer temperature by adjusting wall heat ̄ux. In the present investigation, an ecient recursive method is developed to solve the inverse heat transfer proble...

In this paper experimental results of the silnne oxidation kinetics in a rapid thermal low pressure chemical vapor deposition (RTLPCVD) cold wall reactor at 450 OC are presented. For a certain total pressure kept constant in the range of 0.6-4.5 mbar. it is always found a certain threshold silane partial pressure p(th)siH4 (decreasing from 0.15 mbar to 0.076 n~bnr whcn the total pressure increa...

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 °C to 700 °C in increments of 100 °C using a rapid thermal a...