نتایج جستجو برای: planar channel
تعداد نتایج: 286466 فیلتر نتایج به سال:
A new type of wave guiding structure is proposed this paper. The channel developed on the full planar dielectric substrate and aligned with electromagnetic bandgap (EBG) units. Since these mushroom-like units calculated a coverage working band, are great importance ensuring transmission efficiency eliminating coupling effect between channels. Then, extended to design six-element leaky antenna a...
We present a comprehensive computational toolset for low-field mobility modeling in nano-scaled SOI channels. The dimension-independent methodology allows us to treat planar devices (MOS, UTB) and non-planar ones (Bulk/SOI-FinFET, Nanowire-FET) on equal footing. The method involves combining a selfconsistent Schrödinger-Poisson solution in the channel cross-section with a linearized Boltzmann t...
High performance PMOSFETs with a gate length as short as 18-nm are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect. The 45 nm gate-length PMOS FinFET has an Idsat of 410 PA/Pm (or 820 PA/Pm depending on the definition of the width of a double-gate device) at Vd = Vg = 1.2 V and Tox = 2.5 nm. The quasi-planar nature of this variant of t...
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