Integrating an energy conversion or storage device with photodetectors into a self-powered system provides a promising route to future devices aimed at reduced size, low weight and high flexibility. We reported here the fabrication of a fully flexible self-powered photodetector nanosystem by integrating a flexible SnO2-cloth-based ultraviolet photodetector with a flexible SnO2-cloth-based lithi...

One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent ...

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based ...

A model of an autonomous receiving station free space optical communication system based on a multi-section energy heterostructure (HJT) Si photoconverter and information photodetector AlGaAs/GaAs p-i-n photodiodes has been developed. The part, when excited by laser radiation with power ~ 264 W at wavelength 0.974 μm in the photovoltaic mode, provided ≥ 60 electric power. channel, pulsed 0.78 μ...

An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%-90% rise/decay times to light stimuli of different rise times (rangi...

A Schrödinger representation approach is used to calculate the atom-field dynamics following spontaneous emission by an atom in its excited state to a superposition of its two ground-state sublevels, in the case where the frequency separation of the ground-state sublevels is large compared to the excited-state decay rate. The emitted radiation is incident on a broadband photodetector. Using a r...

Strong optical absorbance makes topological insulator (TI) surfaces a promising high-performance photodetector in the terahertz (THz) to infrared frequency range. Here, we study the optical absorbance of more realistic TI films with hexagonal warping effect using the Fermi's golden rules. It was found that when the warping term is λ ≠ 0, the absorbance is no longer a universal value as that of ...

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...

We developed a simulation model of an integrated CMOS-based imaging platform for use with bioluminescent DNA microarrays. We formulate the complete kinetic model of ATP based assays and luciferase label-based assays. The model first calculates the number of photons generated per unit time, i.e., photon flux, based upon the kinetics of the light generation process of luminescence probes. The pho...

The ability to manipulate light at deeply sub-wavelength scales opens a broad range of research possibilities and practical applications. In this paper, we go beyond recent demonstrations of active photonic devices coupled to planar plasmonic waveguides and demonstrate a photodetector linked to a two conductor metallic slot waveguide that supports a mode with a minute cross-sectional area of ∼ ...