نتایج جستجو برای: photo transistor

تعداد نتایج: 46866  

2003
Jackson Lai Arokia Nathan

Partition noise is closely related to reset noise and has been observed in detection nodes of reset transistor architecture in image sensors. This work presents the analysis of partition noise based on an improved technique for estimation of charge distribution in the transistor channel at any given time instant. We incorporate the transistor turn off transients by taking into account both drif...

Journal: :JCP 2010
Abdoul Rjoub Al-Mamoon Al-Othman

In this paper the performance of 8-transistor based Full adder is analyzed, evaluated, and compared with that of three different types of Full Adders based on Complementary Pass Transistor XOR Logic gate. Simulation results using nano-scale SPICE parameters are obtained for the above mentioned FAs. It is shown that the performance of the 8-transistor based Full adder in term of power dissipatio...

2004
Vishal Khandelwal Ankur Srivastava

Leakage power is increasingly gaining importance with technology scaling. Multi-Threshold CMOS (MTCMOS) technology has become a popular technique for standby power reduction. Sleep transistor insertion in circuits is an effective application of MTCMOS technology for reducing leakage power. In this paper we present a fine grained approach where each gate in the circuit is provided an independent...

2001
Krzysztof S. Berezowski

In this paper, a new method of transistor chaining for 1-D automatic leaf cell synthesis is presented. The method allows synthesis of cells suitable for row-based layouts with no restrictions imposed on network topologies/transistor sizes. The novelty of the solution arises from transistor chaining with integrated dynamic transistor folding. We provide the theoretical analysis of transistor fol...

2009
Aiman H. El-Maleh Bashir M. Al-Hashimi Aissa Melouki Farhan Khan

Nanodevices based circuit design will be based on the acceptance that a high percentage of devices in the design will be defective. In this work, we investigate a defect tolerant technique that adds redundancy at the transistor level and provides built-in immunity to permanent defects (stuck-open, stuck-short and bridges). The proposed technique is based on replacing each transistor by N 2 -tra...

2014
Ching-Lin Fan Ming-Chi Shang Bo-Jyun Li Yu-Zuo Lin Shea-Jue Wang Win-Der Lee

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching th...

Journal: :International Conference on Computational & Experimental Engineering and Sciences online version 2023

External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast, in-plane along has been rarely observed. Here we show that moving a light beam at semiconductor-water interface, i.e. creating boundary of electrical double layers between illuminate...

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2012
mahshad alaei ali reza mahjoub alimorad rashidi

tungsten trioxide nanoparticles with monoclinic structure and average particle size about 80 nm were prepared by the spray pyrolysis method. wo3 nanorods with hexagonal structure and average dimension about 15 × 100 nm were synthesized in gram quantities by modified hydrothermal method at lower temperature and shorter reaction time in comparison to the previous research. photo degradation of co...

2000

Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a ...

2008
Takeshi Yasukouchi Tadashi Suetsugu

This paper analyzes maximum output power of class E amplifier with arbitrary transistor. It is important to estimate maximum output power of class E amplifier when a specification of transistor is given. In this paper, values of circuit parameters that gives maximum output power for given operating frequency, dc supply voltage, and output capacitance of the transistor are calculated. This paper...

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