Ultra Thin Body (UTB) SOI are promising alternatives for extending the MOSFET scaling. However, intrinsic parameter fluctuations still remains as one of the major challenges for the ultimate scaling and integration of UTB SOI MOSFETs. In this paper, using 3D statistical numerical simulations we investigate the impact of random discrete dopants, body thickness variations and line edge roughness ...

We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current–voltage ( – ), capacitance–voltage ( – ), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are im...

One important trend in recent years is the reduction of the silicon film thickness in SOI devices. As results of scaling this parameter several benefits have been obtained such as the elimination of the kink effect, the suppression of short-channel effects, improved subthreshold characteristics, the enhancement of carrier mobility, suppression of punchthrough and drain current overshoot and so ...

A low-power 435-MHz single-ended low-noise amplifier was implemented in a 0.35-μm silicon on insulator (SOI) CMOS technology. The SOI CMOS LNA has a simulated noise figure of 0.6 dB, input 1-dB compression point of –12.5 dBm, input thirdorder intercept point of –5 dBm, and small-signal gain of 22 dB. Total power dissipation is 10 mW from a 2.5-V supply. LNA chip area is 1.4 mm x 0.58 mm. Due to...

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that...

A cyclic A/D conversion circuit technique for sensor networks has been developed using 0.2-μm CMOS/FD-SOI technology. The FD-SOI analog switches can lower the supply voltage without degrading accuracy because of their negligible body effect. The proposed A/D converter achieves operation at the supply voltage of 1 V or less and can handle a sampling frequency ranging from 8 Sps to 8 kSps with a ...

Thermal test structures and ring oscillators (ROs) are fabricated in 0.18-μm three-dimensional (3-D)–SOI technology. Measurements and electrothermal simulations show that thermal and parasitic effects due to 3-D packaging have a significant impact on circuit performance. A physical thermal model is parameterized to provide better prediction of circuit performance in 3-D technologies. Electrothe...

We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 μm CMOS technology and bulkmicromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the se...

In this paper we report the ultrafast all-optical wavelength conversion in Silicon-onInsulator (SOI) waveguides. We used a pump-probe setup with 300 femtosecond pulses to demonstrate large temporal phase-shifts, caused by the Kerr effect and free carrier generation. Large wavelength shifts of a 1683nm probe signal have been observed. The wavelength conversion, ranging from 10nm redshifts to 15n...