Silicon surface passivation of hydrogenated silicon (Si:H) thin films deposited by RF and DC plasma process was investigated by measuring effective minority carrier lifetime (τeff) on Si <100> and <111> wafers and correlated with the silicon heterojunction (SHJ) cell performances in front emitter structure and interdigitated back contact (IBC) structure. Excellent surface passivation (τeff > 1 ...

The passivation cracking of Micro-structures of IC packages is studied by maximum principal stress theory using a certain 2D FEM model with different design parameters, pitch of lines, width of line, thickness of epoxy, thickness of dielectric layer, thickness of glue, the glue material’s yielding stress and Aluminium yielding stress (following as “d”, “w”, “t_epo”, “t_Teos”, “t_glue” “sy_glue”...

The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...

Ternary spinel NiCo2S4 nanorods are tested for the first time as anode electrodes for Li ion batteries. When the electrode is fabricated using the carboxymethyl cellulose-polyacryl amide composite binder, it is found to restrict or suppress the formation of a polymeric gel passivation layer. As a result, the electrode not only delivers excellent specific capacity, but also an outstanding rate a...

p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer J. J. Gu, Y. Q. Liu, M. Xu, G. K. Celler, R. G. Gordon, and P. D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard University, Cambridge,...

1. Introduction Semiconducting heterostructures increasingly attract attention for electronic junction formation in crystalline silicon (c-Si) wafer-based solar cells. A key point of such a device is the displacement of highly recombination-active (ohmic) contacts from the crystalline surface by insertion of a film with wide bandgap. To reach the full device potential, the heterointerface state...

Polymeric coatings such as polyurethanes, acrylic, epoxies and silicones have been used for over 40 years to protect printed wiring boards (PWB) from moisture, handling and environmental influences. Special semiconductor grade polymers have been developed for chip passivation layers. Polyimide became the standard passivation layer for memory chips and other devices needing surface protection fo...

Here we present the first successful attempt to programme the surface properties of nanostructured soft biological tissues by atomic layer deposition (ALD). The nanopatterned surface of lotus leaf was tuned by 3-125 nm TiO2 thin films. The lotus/TiO2 composites were studied by SEM-EDX, XPS, Raman, TG-DTA, XRR, water contact angle and photocatalysis measurements. While we could preserve the supe...

We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ∼100 meV of the Dirac point, well into the topological r...

Alloying base contacts directly through an InGaP emitter layer provides excellent passivation of the GaAs base in HBTs. Processes which utilize this ledge formation scheme and a self-aligned, wet-chemical basecollector etch can suffer degradation in DC performance. Layouts with a hexagonal emitter can circumvent any DC performance degradation because the base electrode can be used as the etch m...