Electronic generation of THz signals using GaN is predicted to exhibit high efficiency. Theory shows that electrons can be ballistically accelerated to the Brillouin zone energy limit of 2.7 V [1,2], and above 1.0 V, they will pass beyond the inflection point and have negative effective mass. Experiments by M. Wraback [3] indicate the presence of negative differential resistance (NDR). Finite e...

Direct metallization of lightly doped n-type crystalline silicon (c-Si) is known to routinely produce non-Ohmic (rectifying) contact behaviour. This has inhibited the development of n-type c-Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p-type c-Si solar cells. In this contribution we demonstrate that low resistance Ohmic contact to n-type c...

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forw...

We report on titanium contacts to n-type and p-type Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si and material and electrical characterization of n-type and p-type platinum±silicide±germanide contacts to Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si. Ti contacts to n-type Si1ÿxÿyGexCy show rectifying behavior at low doping levels but become ohmic as layers reach 10 cmÿ3. Ti ...

The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni(3.5 nm)/ITO(60 nm) and Ni(5 nm)/Au(5 nm) films were studied. It was found that the normalized transmittance of ITO and Ni/ITO films could reach 98.2% and 86.6% at 470 nm, which was much larger than that of the Ni/Au film. It was also found that both Ni/ITO and Ni/Au could form good ohmic contact on top of p-GaN. In contr...

Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the...