The simple fluorinated precursor, copper(II) trifluoroacetate, Cu(CF3COO)2 can be effectively utilised in the synthesis of copper(I) nitride, Cu3N, powders and films by combinations of wet processing and gas–solid (ammonolysis) techniques. The resulting materials were characterized by powder X-ray diffraction (PXD), scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (E...

The green lasers are attractive and highly useful for lot of practical applications. It is more than fifty times brighter when compared to a red laser and thus it can be seen from miles away. Due to these features, the green lasers can be used in high-tech weapons for aiming purposes. More‐ over, the green lasers are highly useful for laser televisions and medical applications. Most of the comm...

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured...

III-nitride quaternary InxAlyGa1-x-yN alloys have experienced considerable interest as potential materials for optoelectronic applications. Despite these interesting applications and the extensive efforts to understand their fundamental properties, research on its fundamental surface property, i.e., surface phonon polariton (SPP) has not yet been reported. In fact, the SPP properties have been ...

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelect...

As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. ...

The generation of sustainable and stable semiconductors for solar energy conversion by photoredox catalysis, for example, light-induced water splitting and carbon dioxide reduction, is a key challenge of modern materials chemistry. Here we present a simple synthesis of a ternary semiconductor, boron carbon nitride, and show that it can catalyse hydrogen or oxygen evolution from water as well as...

Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available on the market for years, an active wide bandgap switch is still missing. Probably the best performance of upcoming devices is gained with normally-on concepts su...

Gallium Nitride (GaN) and its alloys with aluminum (AlxGa1-xN) and indium (InyGa1-yN & AlzIn1-zN) have gained lots of attention in optoelectronics research community in the last decade. These semiconductors relativity have a wide bandgap and easy to make n-type layers by Si doping and p-type layers by Mg doping. Consequently nitride alloys have proved to be very attractive candidate for the fab...

   Here, we report a theoretical detailed study of Vacuum Rabi Splitting (VRS) in the system of Nitride Single Quantum Well (SQW) within a semiconductor microcavity. Distributed Bragg Reflectors (DBRs) containing ZnTe/ZnSe multilayers including GaAs microcavity and  ( SQW at the center of microcavity, has been considered. Upper and lower exciton-polariton branches obtaine...