This paper presents a systematic approach to treating the interfaces between the localized (fine grain) and peripheral (coarse grain) domains in atomic scale simulations of crystalline solids. Based on Fourier analysis of regular lattices structures, this approach allows elimination of unnecessary atomic degrees of freedom over the coarse grain, without involving an explicit continuum model for...

The formation of nanoscale phases at grain boundaries in polycrystalline materials has attracted much attention, since it offers a route toward targeted and controlled design interface properties. However, understanding structure–property relationships these complex interfacial defects is hampered by the great challenge accurately determining their atomic structure. Here, we combine advanced el...

Grain boundaries and their networks have a profound influence on the functional and structural properties of every class of polycrystalline materials and play a critical role in structural evolution and phase transformations. Recent experimental advances enable a full crystallographic characterization, including the boundary misorientation and inclination parameters, of grain boundaries. Despit...

Evaluation of the low cycle fatigue life by the small specimen test technique (SSTT) and some other properties (metallographical structure and Vickers hardness) for the TIG (tungsten inert gas) weld of F82H IEA-heat were carried out. The TIG-weld was distinguished into seven regions with different metallographical structure and hardness, which were the base metal (BM) region (region with almost...

We have explored methods to achieve excellent results in study of the pollen grain wall by using only one electron microscope, the scanning electron microscope (SEM). While the secondary electron imaging mode , the most common in use, has great value in characterizing the exine surface it is possible to obtain a more comprehensive representation of pollen grain walls by expanding the capability...

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1-10]...