In this paper, an analytical solution of the Poisson equation for double-gate metal-semiconductor-oxide field effect transistor (MOSFET) is presented, where explicit surface potential is derived so that the whole solution is fully analytical. Based on approximations of potential distribution, our solution scheme successfully takes the effect of doping concentration in each region. It provides a...

Miniaturization in electronics through improvements in established "top-down" fabrication techniques is approaching the point where fundamental issues are expected to limit the dramatic increases in computing seen over the past several decades. Here we report a "bottom-up" approach in which functional device elements and element arrays have been assembled from solution through the use of electr...

As a severe environmental pollutant, detection and quantitation of nitrogen dioxide (NO2) have been studied for centuries. In this review, recent progress of NO2 analysis in the atmosphere will be summarized. Four major types of detection technologies, including traditional chemical detection, optical detection, solid-state field effect transistor detection, and other detection technology are c...

We have investigated the influence of a contact etch-stop layer ~ESL! on the local mechanical stress in a deep sub-micrometer complementary metal oxide semiconductor ~CMOS! field-effect transistor using convergent-beam electron diffraction with nanoscale resolution. By introducing a thin buffer layer of SiOxNy underneath the Si3N4 contact ESL, we have shown that the compressive channel strain c...

As the size of CMOS devices is scaled down to the nanoscale level, noise interferences start to significantly affect the VLSI circuit performance. Because the noise is random and dynamic in nature, a probabilistic-based approach is more suitable to handle signal errors than the conventional deterministic circuit designs. However, probabilistic-based designs cost larger hardware area. In this pa...

In his famous letter in 1870, Maxwell describes how Joule's law can be violated "only by the intelligent action of a mere guiding agent", later coined as Maxwell's demon by Lord Kelvin. In this letter we study thermodynamics of information using an experimentally feasible Maxwell's demon setup based a single electron transistor capacitively coupled to a single electron box, where both the syste...

We have characterized base-layer width and dopant distributions on cleaved cross-sections of AlxGa12xAs/GaAs heterojunction bipolar transistor ~HBT! structures using a variation of electrostatic force microscopy. The contrast observed is sensitive to the local dopant concentration through variations in the depletion layer depth extending into the sample surface, and enables delineation of indiv...

To bridge the widening gap between computation requirements and communication efficiency faced by gigascale heterogeneous multi-processor SoCs in the upcoming billion-transistor era, a new on-chip communication system, dubbed Wireless Network-on-Chip (WNoC), is proposed by using the recently developed Radio-on-Chip technology. With the uniqueness of wireless interconnection, the WNoC design par...

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nanoscale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we proposed a novel 7-input minority gate in CNTFET technology that has only 9 CNTFETs. Minority function is utilized in the voting systems for decision making ...

Recent reports have shown that nanoscale electronic devices can be used to detect a change in electrical properties when receptor proteins bind to their corresponding antibodies functionalized on the surface of the device, in extracts from as few as ten lysed tumor cells. Here we report a single nanotube field effect transistor arrays, functionalized with IGF1R-specific and Her2-specific antibo...