We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...

HID lamps are used in applications where high luminous intensity is desired. They are used in a wide range of applications from gymnasiums to movie theatres, from parking lots to indoor aquaria, from vehicle headlights to indoor gardening. They require ballasts during start-up and also during operation to regulate the voltage and current levels. Electronic ballasts have advantages of less weigh...

This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that divided horizontally; the diode operated through gate p-base N+ source regions at bottom of gate. Because bult-in was p...

The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, t...

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth-dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becomin...

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the chan...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

Measurement of the lateral profile of the dose distribution across a narrow x-ray microbeam requires a dosimeter with a micron resolution. We investigated the use of a MOSFET dosimeter in an "edge-on" orientation with the gate insulating oxide layer parallel to the direction of the beam. We compared results using this technique to Gafchromic film measurements of a 200 micrometer wide planar x-r...

Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise...