The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contende...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

Recently, transistors with an underlapped gate structure have been widely studied to overcome several challenges associated nanoscale devices. In this work, underlap region is incorporated at source and drain (S/D) ends in a fully depleted Strained Silicon On Insulator (SSOI) device, high-k dielectric material the spacer region. The S/D helps reduce leakage current can be particularly useful fo...

A thorough investigation of N-channel multifinger MOSFET capacitances in dark and under optical illumination is presented in this paper. The intrinsic and extrinsic capacitances are modelled and analysed considering the scaling effects for sub-micron scale MOSFET. Bias dependence is taken into account and capacitances essential for small signal model for RF frequency operation are evaluated. Th...

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two gates, and field plate are introduced vertically on the sidewalls connected, respectively, to source. Technology computer-aided design (TCAD) simulator was used in process achieve specific on-resistance as low 0.79 mΩ.cm ...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...