We review our recent work addressing various theoretical issues in spin-based quantum dot quantum computation and quantum information processing. In particular, we summarize our calculation of electron exchange interaction in two-electron double quantum dots and multi-electron double dots, and discuss the physical implication of our results. We also discuss possible errors and how they can be c...

We describe the resonant excitation of a single quantum dot that is strongly coupled to a photonic crystal nanocavity. The cavity represents a spectral window for resonantly probing the optical transitions of the quantum dot. We observe narrow absorption lines attributed to the single and biexcition quantum dot transitions and measure antibunched population of the detuned cavity mode [g{(2)}(0)...

We demonstrate an optical modulator based on a single quantum dot strongly coupled to a photonic crystal cavity. A vertical p-i-n junction is used to tune the quantum dot and thereby modulate the cavity transmission, with a measured instrument-limited response time of 13 ns. A modulator based on a single quantum dot promises operation at high bandwidth and low power.

The paper reports on theoretical study of electron states for a quantum dot in a graphene monolayer. Discrete energy spectrum of quasiparticles inside the quantum dot is found. Energy levels and corresponding quasiparticle resonant wave functions are obtained, which allow calculating the local density of states inside the quantum dot. Some experimental results recently released are referred.

Photoinduced hole transfer from a CdSe/ZnS quantum dot to a conjugated polymer is tuned by varying the quantum dot core size. Hole transfer affects the photoluminescence blinking of the quantum dot, increasing the duration of the on-states and decreasing that of the off-states.

As the size of a transistor continuously scales down, single electron effects become important [1 – 3]. Previously, we have studied charge transport in single-electron quantum dot transistors which have a channel consisting of a silicon dot separated from the source and the drain by two constrictions [4], and in single-electron MOS memories that have a polysilicon dot floating gate stacked on a...

Using far-field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling...

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes th...