نتایج جستجو برای: metallorganic chemical vapor deposition

تعداد نتایج: 477209  

2015
Xiuju Song Junfeng Gao Yufeng Nie Teng Gao Jingyu Sun Donglin Ma Qiucheng Li Yubin Chen Chuanhong Jin Alicja Bachmatiuk Mark H. Rümmeli Feng Ding Yanfeng Zhang Zhongfan Liu

2012
Raffaella Calarco

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.

Journal: :Micromachines 2016
Takafumi Fukushima Hideto Hashiguchi Hiroshi Yonekura Hisashi Kino Mariappan Murugesan Ji Chel Bea Kang Wook Lee Tetsu Tanaka Mitsumasa Koyanagi

Plasmaand water-assisted oxide-oxide thermocompression direct bonding for a self-assembly based multichip-to-wafer (MCtW) 3D integration approach was demonstrated. The bonding yields and bonding strengths of the self-assembled chips obtained by the MCtW direct bonding technology were evaluated. In this study, chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapo...

2013
Jing Dong Zhaohui Yao Tianzhong Yang Lili Jiang Chengmin Shen

Superhydrophobic and superhydrophilic properties of chemically-modified graphene have been achieved in larger-area vertically aligned few-layer graphene nanosheets (FLGs), prepared on Si (111) substrate by microwave plasma chemical vapor deposition (MPCVD). Furthermore, in order to enhance wettability, silicon wafers with microstructures were fabricated, on which graphene nanosheets were grown ...

2009
T. N. Blanton K. B. Kahen S. K. Gupta

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pindiode LED applications. ZnSe has a large band gap, 2.76 eV, as well as a near lattice match to GaAs, 5.6688 Å vs. 5.6538 Å, respectively. In this study a metallorganic vapor phase epitaxy (MOVPE) deposition technique is used to produce doped and undoped thin films of ZnSe on (100) GaAs. Understanding the e...

2005
Karen K. Gleason Hilton G. Pryce Lewis Kelvin Chan Kenneth K.S. Lau Yu Mao

Initiated chemical vapor deposition (iCVD) is a novel process capable of producing a range of polymeric and multifunctional nanocoatings. The process utilizes hot filaments to drive gas phase chemistry which enables the deposition of true linear polymers rather than the highly crosslinked organic networks often associated with plasma enhanced CVD. Importantly, the object to be coated remains at...

2010
R. G Wellman

Since the introduction of electron beam (EB) physical vapour deposition (PVD) thermal barrier coatings (TBCs) and their application to moving components in the hot gas stream, erosion has become a prime concern. EB PVD TBCs, due to their unique columnar microstructure are far more strain tolerant than their plasma sprayed (PS) counter parts and can thus be used under more exacting operating con...

2007
Peter Panjan

Last 2 to 3 decades application of PVD (physical vapour deposition) hard coatings exponentially grows. However, the use of hard, thin films in the field of machine elements is the exception rather than the rule. The main problem lies in the relatively high contact pressure and the very complex loading of machine components, which demand a hard resistance surface and a tough core. In seminar it ...

2002
Q. TANG

Highly granular YBaCuO films on SrTlO, substrates wlth T,,,-90K and J,>lO' A/cm2 were prepared by non-vacuum aerosol deposition. The optical response for these films was investigated on a 10 x 10 pm2 mlcrobrldge. Besides a bolometrlc response around the transition temperature, a sharp response peak was observed at low temperature and high bias current using a He-Ne laser (0.63pm wavelength) lll...

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