نتایج جستجو برای: metal oxide

تعداد نتایج: 356484  

2012
Marie-Alexandra Neouze Marco Litschauer Michael Puchberger Johannes Bernardi

ABSTRACT A newly arising challenge in the field of nanoparticle research concerns the control and the understanding of the interparticle interactions and interparticle properties. This should allow the development of materials based on nanoparticle assemblies which represents a great opportunity to exploit nanoparticle collective properties. Although some nanoparticle networks have been reporte...

2015
Tobias Binninger Rhiyaad Mohamed Kay Waltar Emiliana Fabbri Pieter Levecque Rüdiger Kötz Thomas J. Schmidt

In recent years, the oxygen evolution reaction (OER) has attracted increased research interest due to its crucial role in electrochemical energy conversion devices for renewable energy applications. The vast majority of OER catalyst materials investigated are metal oxides of various compositions. The experimental results obtained on such materials strongly suggest the existence of a fundamental...

2012
Zhenhuan Zhao Hong Liu Shaowei Chen

This review focuses on electron transfer at the interfaces between metal oxides and dye molecules within the context of the chemical nature of the anchoring functional groups, the structure of the dye molecules and the morphology of the metal oxides. In dye-sensitized metal oxides, the efficiency of interfacial charge separation and hence photon-to-current conversion may be sensitively manipula...

M. H. Abbasi and M. Safarnoorallah,

Fuel oil used in power plants contain metal impurities like Vanadium. After combustion, this metal remains in boiler fuel ash in the form of oxide. In this research, extraction of Vanadium oxide from fuel ash has been investigated. Two processes were used for this purpose. A pyro- hydrometallurgy and a hydrometallurgy process. In the pyro-hydrometallurgy process, using sodium carbonate, salt ro...

2008
J. I. Beltrán M. C. Muñoz

Several studies of the decohesion properties of various oxide/metal systems have been performed recently by ab initio calculations. However, the use of different computational methods, which involve diverse approximations, energy functionals, or calculation conditions, makes the identification of general trends difficult. In the present work, a broad range of interfaces between an ionic oxide A...

2002
F. G. FERRIS K. O. KONHAUSER

Bacteriogenic iron oxides (BIOS) and groundwater samples were collected from 66 to 432 m underground at the È Asp È o Hard Rock Laboratory near Oskarshamn, Sweden. The twisted, iron oxide± encrusted stalks of the lithoautotrophic ferrous iron± oxidizing bacterium Gallionella ferruginea were prominent in the BIOS samples. A wide variety of heterotrophic bacteria, including stalked forms resembli...

2013
Santosh K. Gupta S. Baishya

Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...

2016
Joop van Deelen Yasemin Tezsevin Marco Barink

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a me...

Journal: :Advanced materials 2015
Xinge Yu Li Zeng Nanjia Zhou Peijun Guo Fengyuan Shi Donald B Buchholz Q Ma Junsheng Yu Vinayak P Dravid Robert P H Chang Michael Bedzyk Tobin J Marks Antonio Facchetti

Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance ...

2013
Julia Dräger Stefanie Russ Tilman Sauerwald Claus-Dieter Kohl Armin Bunde Julia Dr€ ager

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