نتایج جستجو برای: metal assisted chemical etching
تعداد نتایج: 688698 فیلتر نتایج به سال:
A generic process for the preparation of curved silicon nanowires (SiNWs) with ribbon-like cross sections was developed. The present synthetic approach is based on chemical etching of (100)-oriented silicon wafers in mixture solutions of HF and H(2)O(2) by using patterned thin gold films as catalyst and provides a unique opportunity for the fabrication of extended arrays of zigzag SiNWs, ultrat...
Metal-assisted chemical etching (MaCE) of a (100) n-type GaP using patterned Pd catalysts in a mixed solution of HF and H2O2 at room temperature is reported for the first time. Various patterns of Pd catalysts, i.e., meshes and patches, with length scales ranging from 200 nm to several μm were used. Depending on the sizes of the Pd catalysts, GaP exhibits two distinctively different MaCE mechan...
Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theore...
The development of an etching process with controllable rate and high selectivity is key to fabricating high-performance electronic optoelectronic devices. In this paper, we report the photo-enhanced metal-assisted...
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