نتایج جستجو برای: magnetron

تعداد نتایج: 4577  

2004
Julio A. Bragagnolo Bhushan Sopori Tohru Hashimoto Ichiro Sugiyama

Techniques for cost-efficient operation of SiNx:H systems with a capability for hydrogen passivation in a manufacturing environment are analyzed. We conclude that SiNx:H performance may be optimized by a variety of techniques, and that the cost and productivity of the deposition tool may be the determining factors in the industry’s decision for a particular technique. PECVD constitutes the curr...

1996
M. Freiler G. F. McLane

Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum well material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching ~MIE!. Luminescence spectroscopy shows confinement of charge carriers to the features’ center. The effects of rf power and etching time on the luminescence efficiency of these features and its concomitant etch-induced da...

2010
M Jullien D Horwat J L Endrino R Escobar Galindo Ph Bauer

Aluminium doped zinc oxide thin films (4 at.% Al) were deposited by reactive magnetron sputtering technique and characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), four point probe technique and optical spectrophotometry. High heterogeneities were observed as a function of sample position in the chamber. The chemical analyses did not reveal significant change...

1999
S. Henderson

A thin metallic coating is required on the inside of central detector beryllium beampipes at high-current ee colliders in order to suppress detector backgrounds that arise from scattered synchrotron radiation. As part of two CESR/CLEO upgrades, three beryllium beampipes have been coated with gold using a magnetron sputtering technique. The apparatus will be described as well as the factors that...

2011
A. Kolpaková P. Kudrna M. Tichý

Low-temperature and low-pressure plasma was investigated by OES (optical emission spectroscopy) in the range 200–1100 nm. For displaying measured emission spectra and identification of spectrum lines the software Spectrum Analyzer was used. Two modes of glow discharge present in the DC cylindrical magnetron apparatus which were previously researched by a mass spectrometer were studied by OES. T...

Journal: :Journal of Physics: Conference Series 2016

2005
Z. G. Yin H. T. Zhang D. M. Goodner M. J. Bedzyk R. P. H. Chang J. B. Ketterson

We present results on the in situ, two-dimensional growth sas opposed to the more commonly encountered island-coalescence mechanismd of continuous epitaxial Cu2O films on MgOs011d using dc facing-magnetron sputtering from metallic Cu targets in an oxygen/argon atmosphere. Film growth was studied as a function of deposition time and the dc power applied to the guns. Control of the latter leads t...

2004
Y. Sakuraba

Nanocrystalline films of La-doped CaB6 have been fabricated by using a rf-magnetron sputtering. Lattice expansion of up to 6% with respect to the bulk value was observed along the direction perpendicular to the film plane, which arises from the trapping of Ar gas into the film. Large ferromagnetic moment of 3 ∼ 4 μB/La has been observed in some La-doped films only when the lattice expansion rat...

2016
Susann Schmidt Carina Höglund Jens Jensen Lars Hultman Jens Birch Richard Hall-Wilton

access at Springerlink.com ABSTRACT B4C coatings for B-based neutron detector applications were deposited using high-power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) processes. The coatings were deposited on Si(001) as well as on flat and macrostructured (grooved) Al blades in an industrial coating unit using B4C compound targets in Ar. The HiPIMS and D...

2014
Shilei Zhao Chunwang Zhao

Ti-47 at.%Ni alloy films were prepared by magnetron sputtering followed by 460°C for 40 minutes heat-treatment. The strain fields between B2 phase matrix and G.P. zone were mapped by a combination of high-resolution transmission electron microscopy and geometric phase analysis method. It was found that there is a compressive strain region parallel to the longitudinal axis of G.P. zone with 2 nm...

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