A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED’s and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed. T HE temperature sensitivity and power saturation of InGaAsP lasers and light emitting diodes (LEDs) have triggered an extensive search for the responsible mechanisms....

We present the two-dimensional optimization of the acceptor doping profile of a 0.25 /im MOSFET which improves the drive current by 48% compared to a uniformly doped device delivering the same drain-source leakage current. Various values for the supply voltage and the allowed leakage current are used to qualitatively investigate their influence on the optimal profile.

High leakage current in deep sub-micron regimes is a significant contributor to the power dissipation of CMOS circuits as the CMOS technology scales down. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low power applications. . This paper explores transistor leakage mechanisms and devi...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Computing Leakage Current Distributions and Determination of Minimum Leakage Vectors for Combinational Design. (May 2006) Kanupriya Gulati, B.E., University of Delhi Chair of Advisory Committee: Dr. Sunil Khatri Analyzing circuit leakage and minimizing leakage during the standby mode of operation of a circuit are important problems faced during contemporary circuit design. Analysis of the leaka...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Large leakage-current reduction of SiO2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing RTP of SiO2 at T Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T Tc in pure N2 does not change t...

This paper investigates the role of electrode– dielectric interactions, and barrier materials on leakage current, breakdown voltage, yield and reliability of thinfilm (Ba,Sr)TiO3 capacitors on silicon and glass substrates. The first part of the paper investigates the electrode–dielectric interactions with sputtered Cu and Ni electrodes to identify the mechanisms that lead to high leakage curren...