We have measured diffusion thermopower in a two-dimensional electron gas at low temperature (T=40 mK) in the field range 0 < B < 3.4 T, by employing the current heating technique. A Hall bar device is designed for this purpose, which contains two crossing Hall bars, one for the measurement and the other used as a heater, and is equipped with a metallic front gate to control the resistivity of t...

The interface between the two band insulators SrTiO3 and LaAlO3 has the unexpected properties of a two-dimensional electron gas. It is even superconducting with a transition temperature, T(c), that can be tuned using gate bias V(g), which controls the number of electrons added or removed from the interface. The gate bias-temperature (V(g), T) phase diagram is characterized by a dome-shaped regi...

In this paper a ret iming methodology i s proposed which reduces the power consumpt ion of digital CMOS circuits. T h e application of high level synthesis tools f o r arbitrary designs usual ly leads to the usage of edge triggered registers. However, VLSI implementa t ions of DSP algorithms which are considered here m a k e level sensi t ive registers applicable. Level sensitive registers cons...

We study a gate-tunable superconducting qubit (gatemon) based on thin InAs-Al hybrid nanowire. Using gate voltage to control its Josephson energy, the gatemon can reach strong coupling regime microwave cavity. In dispersive regime, we extract energy relaxation time T 1 ∼ 0.56 μs and dephasing <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="sc...

A Boolean circuit is a directed acyclic graph with some designated input gates of fan-in zero and one designated output gate of fan-out zero in which all non-input nodes are labeled with or, and, or not. All or and and gates have fan-in two, and all not gates fan-in one. We assume that the gates of a Boolean circuit are arranged in layers; each layer consists of gates whose inputs come only fro...

Four-probe resistance vs temperature and gate voltage are reported for an individual single-wall carbon nanotube rope before and after doping in situ with potassium. All the features in R(T) from unoriented bulk material, before and after doping, are qualitatively reproduced by the rope data. The 5.3 K conductance of the pristine rope decreases with positive gate voltage, while G vs Vg becomes ...

Layered 2D materials display unique optical and electrical properties that can enable manipulation, propagation, detection of electromagnetic waves over a broad spectral range, with high level control, offering the potential to activate different functionalities, by or means, in single chip. Here, compact optoelectronic device behaving as an amplitude modulator, saturable absorber mirror (SA mi...

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...