Thermal conduction in periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. Here we argue that two additional mechanisms-quasiballistic phonon transport normal to the metal film and inelastic electron-interface scattering-can also impact conduction in metal/dielectric multilayers with a period bel...

Abstract At the interfaces in an ideal epitaxial superlattice, it may be expected that there exists no thermal boundary resistance (TBR) due to thermal motions because the interfaces are atomically perfect. However, recent researches reported that the TBR still exists at the epitaxial interfaces of superlattices. Our previous study suggested the model, which was named as the C-M model, to predi...

A model for phonon heat conduction in a semiconductor nanowire with dimensions comparable to the phonon mean free path is developed. It is based on the solution of Boltzmann’s equation, which takes into account i modification of the acoustic phonon dispersion due to spatial confinement, and ii change in the nonequilibrium phonon distribution due to partially diffuse boundary scattering. Numeric...

Ahstraet--ln many cooling situations, permanent attachment of fins to heat dissipating devices is undesirable yet htrge mechanical loads, important in reduction of thermal contact resistance, are not permitted. This work considers the interface between a low-force pressed-on fin and a heat source in boiling heat transfer; the thermal contact resistance and how the interface region may be used t...

Overview The 4x4 QFN package is becoming popular for many signal and interface applications. To enable optimal thermal performance, this package has an exposed heatsink designed to be soldered directly to a metal pad on the application board. The purpose of this article is to show how application board thermal properties dominate the typical system in which a small QFN package might be used. Th...

Elastic phonon scattering at an atomically rough interface that separates two fcc lattice leads is computed via a Green’s function method. Results are compared to specular and diffuse phonon scattering models, both of which are widely used in the numerical simulations of phonon Boltzmann transport equations. The shape of the discrete interface in the model is quantified by its spectral characte...

Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors wit...

The authors examine the electrical properties of ultrathin MgO barriers grown on 001 InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface res...