We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies. INTRODUCTION InP based...

III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This th...

W42 Effect of a live-yeast-based product on colostrum quality and milk yield in first month of lactation on a private dairy farm. C. Julien*1,2, A. Fernandez3, and J. P. Marden3, 1INRA, UMR1289 TANDEM, Tissus Animaux Nutrition Digestion Ecosystème et Métabolisme, Castanet-Tolosan, France, 2Université de Toulouse, INPT ENSAT, INP-ENVT, UMR1289 TANDEM, Castanet-Tolosan, France, 3Lesaffre Feed Add...

We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved performance, integration, and device rel...

InP based ultra-thin quan[um well is changed from a square well, with quantum well infrared photodetector via rapid sharp interfaces, to an error-function shaped well, thermal annealing with a corresponding change in the confined energy 1cvcIs[3,4]. This tunability is of interest to IR QWIPS such as the detector photoresponse and absolute rcsponsivity. by gas source molecular beam epitaxy (GSMB...

We prove that any left-ordered inp-minimal group is abelian and we provide an example of a non-abelian left-ordered group of dp-rank 2. Furthermore, we establish a necessary condition for group to have finite burden involving normalizers of definable sets, reminiscent of other chain conditions for stable groups. 0 Introduction and preliminaries One of the model-theoretic properties that gained ...

In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...

and Introduction: There are currently no electrically-pumped semiconductor lasers that can operate in the 1-5 terahertz (THz) spectral range at room temperature. An alternative method of producing room temperature THz light is based on intra-cavity difference frequency generation (DFG) in dual wavelength mid-infrared quantum cascade lasers. Our THz DFG sources can provide tunable output of over...

iii List of appended papers v

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-groo...