نتایج جستجو برای: inp material
تعداد نتایج: 367987 فیلتر نتایج به سال:
We have used micro-photoand cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the locat...
در این پایان نامه در ابتدا ساختار لایه و ناخالصی یک لیزر مبتنی بر مواد inp/ingaasp و ساختار بالک را بررسی و تحلیل نموده ایم. در این ساختار لایه ingaasp به عنوان لایه فعال و لایه های inp با ناخالصی تدریجی به عنوان لایه های تحدید استفاده شدند. این لیزر درطول موج µm 55/1 تشعشع خواهد داشت. سپس بجای لایه فعال ingaasp از سه جفت لایه inp/ingaas چاه کوانتومی استفاده گردید. ساختار جدید نشان می دهد که مش...
Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1–12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon’s material pro...
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...
InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization ef...
InP based ultra-thin quan[um well is changed from a square well, with quantum well infrared photodetector via rapid sharp interfaces, to an error-function shaped well, thermal annealing with a corresponding change in the confined energy 1cvcIs[3,4]. This tunability is of interest to IR QWIPS such as the detector photoresponse and absolute rcsponsivity. by gas source molecular beam epitaxy (GSMB...
W42 Effect of a live-yeast-based product on colostrum quality and milk yield in first month of lactation on a private dairy farm. C. Julien*1,2, A. Fernandez3, and J. P. Marden3, 1INRA, UMR1289 TANDEM, Tissus Animaux Nutrition Digestion Ecosystème et Métabolisme, Castanet-Tolosan, France, 2Université de Toulouse, INPT ENSAT, INP-ENVT, UMR1289 TANDEM, Castanet-Tolosan, France, 3Lesaffre Feed Add...
We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved performance, integration, and device rel...
We prove that any left-ordered inp-minimal group is abelian and we provide an example of a non-abelian left-ordered group of dp-rank 2. Furthermore, we establish a necessary condition for group to have finite burden involving normalizers of definable sets, reminiscent of other chain conditions for stable groups. 0 Introduction and preliminaries One of the model-theoretic properties that gained ...
In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...
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