The electrical conductivities, Seebeck coefficients and thermal conductivities across the ZnO–In2O3 binary system are reported and related to the phase compositions and microstructures present at 1150 and 1250 C. The ZnO–In2O3 binary system is of particular interest as it contains a variety of different types of phases, superlattice (modular) phases, solid solutions, two-phase regions and cryst...

Establishing heterostructures, as a good strategy to improve gas sensing performance, has been studied extensively. In this research, In2O3-composite SnO2 nanorod (ICTOs) heterostructures have been prepared via electrospinning, followed by calcination. It is found that In2O3 can improve the carrier density and oxygen deficiency of SnO2. In particular, the 3ICTO (Sn : In atom ratio of 25 : 0.3) ...

Isochronal annealing of amorphous Zn and Sn codoped In2O3 (a-ZITO) films was performed at the Synchrotron so that to extract, in situ, important kinetic nucleation and growth parameters from a single constant-rate heating experiment. First, amorphous Zn and Sn codoped In2O3 films were deposited via pulsed laser deposition and subjected to postdeposition annealing treatments to study their stabi...

This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to character...

We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of...

The bulk nucleation and basal growth of semiconducting nanowires from molten Ga pools has been demonstrated earlier using oxygen/hydrogen plasma over molten Ga pools. Herein, we extend the above concept for bulk synthesis of oxide and sulfide nanowires of low-melting metal melts such as Sn and In. Specifically, nanowires of b-Ga2O3, b-In2O3, SnO2, a-Ga2S3, and b-In2S3 were synthesized using dir...

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to i...

Indium oxide (In2O3) inverse opal is a promising new transducer material for resistive and optical gas sensors. The periodically ordered and highly accessible pores of the inverse opal allow the design of resistive sensors with characteristics independent of structure limitations, such as diffusion effects or limited conductivity due to constricted crosslinking. Additionally the photonic proper...

Single crystalline metal oxide nanowires formed via a vapor-liquid-solid (VLS) route provide a platform not only for studying fundamental nanoscale properties but also for exploring novel device applications. Although the crystal phase variation of metal oxides, which exhibits a variety of physical properties, is an interesting feature compared with conventional semiconductors, it has been diff...