نتایج جستجو برای: h bn
تعداد نتایج: 537512 فیلتر نتایج به سال:
In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10...
The development of low-cost and high-performance electrocatalysts remains a challenge for the hydrogen oxidation reaction (HOR) in alkaline membrane fuel cells. Here, we have reported novel Ni@h-BN core– shell nanocatalysts consisting of nickel nanoparticles encapsulated in few-layer h-BN shells. The Ni@hBN catalysts exhibit an improved HOR performance compared with the bare Ni nanoparticles. I...
Hexagonal boron nitride (h-BN) is an electrical insulator with a large band gap of 5 eV and a good thermal conductor of which melting point reaches about 3000 °C. Due to these properties, much attention was given to the thermal stability rather than the electrical properties of h-BN experimentally and theoretically. In this study, we report calculations that the electronic structure of monolaye...
To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moiré patterns are observed and the sensitivity of mo...
Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature, whereas an atomically thin layer of h-BN is a dielectric with a wide bandgap of ∼5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be ...
In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace condition during perform formation BN. The observation morphology scanning microscopy atomic force showed nanodots BN films. exist...
We study the H(Bn) Corona problem PN j=1 fjgj = h and show it is always possible to find solutions f that belong to BMOA(Bn) for any n > 1, including infinitely many generators N . This theorem improves upon both a 2000 result of Andersson and Carlsson and the classical 1977 result of Varopoulos. The former result obtains solutions for strictly pseudoconvex domains in the larger space H ·BMOA w...
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