نتایج جستجو برای: growth defects
تعداد نتایج: 939617 فیلتر نتایج به سال:
Research presented in this paper involves the numerical simulation of crack growth a welded joint made common structural steel S235JR2, but with presence number different welding defects, which represents scenario that is not covered by relevant standards, case EN ISO 5817. After analysing several defect combinations, could occur reality, one least favourable combination stress concentration an...
This chapter presents a review of the typical growth defects of crystals fully grown on (planar) habit faces, i. e. of crystals grown in all kinds of solutions, in supercooled melt (mainly lowmelting organics) and in the vapour phase. To a smaller extent also growth on rounded faces from the melt is considered when it seemed to be adequate to bring out analogies or discuss results in a more gen...
The ubiquitin-proteasome and autophagy-lysosome pathways are the two major routes of protein and organelle clearance. The role of the proteasome pathway in mammalian muscle has not been examined in vivo. In this study, we report that the muscle-specific deletion of a crucial proteasomal gene, Rpt3 (also known as Psmc4), resulted in profound muscle growth defects and a decrease in force producti...
Introduction Renal tubular acidosis (RTA) is a non-uremic defects of urinary acidification. It is characterized by a normal anion gap hyperchloremic metabolic acidosis; plasma potassium may be normal, low or high-depending on the type of RTA. These syndromes differ from uremic acidosis which is associated with a high anion gap, decreased glomerular filtration with enhanced proton secretion b...
Deep-level transient spectroscopy ~DLTS! measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy ~LT-MBE! at 320 °C. In the LT-MBE as-grown samples, two dominant divacancy-related complex defects, of which the possible origins are suggested as P – V (E center)1V – V (0/2) and...
The quality of crystalline silicon highly influences the quality of semiconductor devices fabricated with it. Grown-in defects, such as octahedral voids or networks of large dislocation loops can be detrimental to the functionality of devices. Both type of defects result from the interaction of intrinsic point defects, vacancies and self-interstitials during growth and subsequent annealing of t...
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