A low voltage and power current differencing transconductance amplifier (CDTA) based on Floating gate MOSFET (FGMOS) Quasi-floating (QFGMOS) is presented. The use of QFGMOS eliminates confined in the floating gate, degraded gain-bandwidth product, silicon area etc. proposed circuits have been simulated using spice simulation software 180nm technology analog devices LtSpice XVII supply used for ...

In this Letter, we experimentally investigate the impact of gate geometry on forward operation Schottky-gate p-GaN high electron mobility transistors (HEMTs). particular, analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure in linear regime. These exhibit unique threshold voltage subthreshold swing scaling dependence that is contrast classic field-eff...

The Surface Operations Simulator and Scheduler (SOSS) is a fast-time simulation of the airport surface used to rapidly develop and test new surface scheduling concepts. Gate conflicts present a challenge for surface scheduling. A late departure pushback or early arrival sharing the same gate can cause a gate conflict, which if left unmanaged, can lead to surface gridlock. Surface scheduling con...

Recent investigations show that conservation laws limit the accuracy of gate operations in quantum computing. The inevitable error under the angular momentum conservation law has been evaluated so far for the CNOT, Hadamard, and NOT gates for spin 1/2 qubits, while the SWAP gate has no constraint. Here, we consider arbitrary self-adjoint gates under arbitrary conservation laws from a geometrica...

This paper presents a detailed investigation of the degradation of electrostatic discharge (ESD) strength with high gate bias for deep-submicron salicided ESD protection nMOS transistors, which has significant implications for protection designs where high gate coupling occurs under ESD stress. It has been shown that gate-bias-induced heating is the primary cause of early ESD failure and that t...

Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred ...