نتایج جستجو برای: gate workfunction

تعداد نتایج: 42963  

Journal: :IEICE Transactions 2006
Yasue Yamamoto Takeshi Hidaka Hiroki Nakamura Hiroshi Sakuraba Fujio Masuoka

This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon b...

Journal: :آب و خاک 0
محسن نصرآبادی محمد حسین امید جواد فرهودی

abstract in this study, the effect of suspended load transport on the characteristics of submerged hydraulic jump (shj) in a rectangular channel was investigated experimentally. sediment concentration and jet froude numbers in the range of 0.424%-16.15% and 1.93-4.96, respectively, were considered. tow grain size 0.15 and 0.03 mm were used in the experiments. characteristics of submerged hydrau...

Journal: :journal of nanostructures 2014
a. hayati a. bahari

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

2017
Radhouane Laajimi Lamjed Touil Ali Newaz Bahar

Novel digital technologies always lead to high density and very low power consumption. One of these concepts is Quantum-dot Cellular Automata (QCA), which is one of the new emerging nanotechnology-based on Coulomb repulsion. This article presents three architectures of logical “XOR” gate, a novel structure of two inputs “XOR” gate, which is used as a module to implement four inputs “XOR” gate a...

2004
Qiang Lu Hideki Takeuchi Xiaofan Meng Tsu-Jae King Chenming Hu Katsunori Onishi Jack Lee

Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin Hf02 gate dielectric. Compared with polySi, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000°C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to red...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2011
Airat Gubaev Dagmar Klostermeier

DNA gyrase introduces negative supercoils into DNA in an ATP-dependent reaction. DNA supercoiling is catalyzed by a strand-passage mechanism, in which a T-segment of DNA is passed through the gap in a transiently cleaved G-segment. Strand passage requires the coordinated closing and opening of three protein interfaces in gyrase, the N-gate, DNA-gate, and C-gate. We show here that DNA binding to...

2009
Saraju P. Mohanty Dhiraj K. Pradhan

The gate-oxide (aka gate tunneling or gate) leakage due to quantum-mechanical direct tunneling of carriers across the gate dielectric of a device is a major source power dissipation for sub-65nm CMOS circuits. In this paper a high-level (aka architecture) synthesis algorithm is presented that simultaneously schedules operations and binds to modules for gate leakage optimization. The algorithm u...

Journal: :international journal of nanoscience and nanotechnology 2013
m. kianpour r. sabbaghi-nadooshan

quantum-dot cellular automata (qca) has low power consumption and high density and regularity. qca widely supports the new devices designed for nanotechnology. application of qca technology as an alternative method for cmos technology on nano-scale shows a promising future. this paper presents successful designing, layout and analysis of multiplexer with a new structure in qca technique. in thi...

Journal: :IEEE Access 2023

A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, GIT diode characteristic at the gate-source, and corresponding drive circuit is thus required. Several studies in literature have proposed circuits with speed-up capacitors, but adding these capacitors complicates circuit, increases both reverse conduction losses. Moreover, driving such becomes m...

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