Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a ...

Gallium nitride (GaN) is the main component of modern-day high electron mobility transistors due to its favorable electronic properties. As devices become smaller with more complex surface architecture, ability deposit high-quality GaN films at low temperatures required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate epitaxial by atomic layer deposition (AL...

The green lasers are attractive and highly useful for lot of practical applications. It is more than fifty times brighter when compared to a red laser and thus it can be seen from miles away. Due to these features, the green lasers can be used in high-tech weapons for aiming purposes. More‐ over, the green lasers are highly useful for laser televisions and medical applications. Most of the comm...

The growth of high-quality InN and indium rich group III-nitride alloys are of crucial importance for the development of high-efficient energy conversion systems, THz emitters and detectors structures, as well as for high-speed linear/nonlinear optoelectronic elements. However, the fabrication of such device structures requires the development of growth systems with overlapping processing windo...

The inelastic scattering of fast electrons transmitting thin foils of silicon (Si), silicon nitride (Si(3)N(4)), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was analyzed using dielectric theory. In particular, the impact of surface and bulk retardation losses on valence electron energy-loss spectroscopy (VEELS) was studied as a function of the foil thickness. It i...

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...

Wurtzite gallium nitride nanostructures were grown by thermal reaction of gallium oxide and ammonia. The resulting morphology varied depending on ammonia flow rate. At 75 sccm only nanowires were obtained, while polyhedral crystals and nanobelts were observed at 175 sccm. Scanning electron microscopy and transmission electron microscopy revealed both thin smooth and thick corrugated nanowires. ...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

The effect of the nano-scale lateral milling process using a focused ion beam (FIB) was studied in order to prepare a flat and smooth surface suitable for the growth of optical device structures such as a distributed Bragg reflector (DBR) mirror on a rough gallium nitride (GaN) surface. A high-quality, smooth, and flat surface is very essential for high precision space optics. It was fabricated...