A simple design of a GaN field-effect transistor on Si substrate with efficient heat removal through polydiamond layers formed the walls grounding holes is proposed. According to calculations, as result introduction such sink same average distance between gate sections, maximum temperature in channel decreases significantly and becomes comparable SiC substrate.. Keywords: FET, ground hole, temp...

Metal nanoparticles decorated single-walled carbon nanotubes (SWNTs) can lead to considerable enhancement in sensing performance towards different gas analytes, however the sensing mechanism was not clearly elucidated. The detailed sensing mechanism of hybrid gold-SWNT nanostructures toward hydrogen sulfide was investigated using field effect transistor (FET) transfer characteristics. At low H2...

Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semic...

Enhanced surveillance of influenza requires rapid, robust, and inexpensive analytical techniques capable of providing a detailed analysis of influenza virus strains. Functionalized poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) was demonstrated to achieve specific and ultrasensitive (at fM level) detection of high pathogenic strain virus (H5 and H7) DNA of avian influ...

Abstract We develop a disposable and cost-effective non-enzymatic glucose sensor consisting of an extended gate field effect transistor (EG-FET) to obtain effortless operation. The is fabricated by printing, gold (Au) precursor ink copper oxide nanoparticles (CuO NPs) inks using commercial inkjet printer on flexible Polyimide (PI) substrate. First, sensing properties are tested electrochemicall...

In article number 2004707, Joon Hak Oh, Jong-Beom Baek, and co-workers report the design synthesis of fused aromatic network structures with C5N basal plane stoichiometry. Thin films cast onto silicon dioxide substrates from solution exhibit ambipolar charge transport extraordinary high electron hole mobilities in field-effect transistor (FET) devices, superior to performance most pristine orga...

Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling supply in logic gates. Here we demonstrate GaAs FET with monolayer graphene gate which was externally controlled by an additional control gate. forms Schottky junction channel, modulating channel conductivity. sets work function gate, controlling barrier height therefore voltage, re...

In the present study, we demonstrate the effect of vacancy evolution on high-pure metallic single-walled carbon nanotube (m-SWCNT) networks by observing the electrical characteristics of the networks on the field-effect transistor (FET). By catalytic oxidation using Co catalyst, vacancy evolution was gradually realized in high-pure m-SWCNT formed as networks between source-drain electrodes of F...

Nanomaterial-based field-effect transistor (FET) sensors are capable of label-free real-time chemical and biological detection with high sensitivity and spatial resolution, although direct measurements in high-ionic-strength physiological solutions remain challenging due to the Debye screening effect. Recently, we demonstrated a general strategy to overcome this challenge by incorporating a bio...