نتایج جستجو برای: ferroelectric materials
تعداد نتایج: 443347 فیلتر نتایج به سال:
Control over ferroelectric polarization variants in BiFeO3 films through the use of various vicinal SrTiO3 substrates is demonstrated. The ferroelectric polarization variants in these films are characterized by piezoelectric force microscopy and the corresponding structural variants are carefully analyzed and confirmed by X-ray diffraction. Implementation of this approach has given us the abili...
With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices...
Surprising qualities point to next-generation electronics.
Thick polycrystalline pure PbTiO3 films with nano size grains were synthesized for the first time by aerosol deposition. Annealed 7 μm thick films exhibit well-saturated ferroelectric hysteresis loops with a remanent polarization and coercive field of 35 μC/cm(2) and 94 kV/cm, respectively. A large-signal effective d33,eff value of >60 pm/V is achieved at room temperature. The measured ferroele...
In this chapter we present an overview of some important concepts related to the processes and microstructural mechanisms that produce the deformation of hysteresis loops and the loss of their symmetry characteristics in ferroelectric, ferroelastic and ferromagnetic systems. The most discussed themes include: aging and fatigue as primary mechanisms of biased hysteresis loops in ferroelectric/fe...
Phase boundaries in multiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetism and electronic properties by external electric fields through switching of the polarization in the material. It has been shown that the strain-driven morphotropic phase boundaries in a single-phase multiferroic such as BiFeO3 (BFO) can exhib...
Applications of ferroelectric ceramics, ranging from components for sensors, memory devices, microelectromechanical systems, and energy convertors, all involve planar and rigid layouts. The brittle nature of such materials and their high-temperature processing requirements limit applications to devices that involve only very small mechanical deformations and narrow classes of substrates. Here, ...
A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization...
Electronic properties of CaTiO3 crystal in paraelectric and ferroelectric phases have been studied by first principles, using Hohenberg-Kohn-Sham density functional theory (DFT). In paraelectric phase the results show an indirect band gap of about 2eV at -R direction in the Brilluoin zone and a strong hybridization between Ti-3d an O-2P orbital. In ferroelectric phase a direct band gap of abo...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید