The goal of this study is to make selective etch possible for the next generation MEMS(microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due tothe large magnetic-field-induced strains Ni-Mn-Ga, sensing actuating components can be fab-ricated in Other functional manufactured layer.Single crystalline alloys grown by using Bridgman vertical growth techniquehave...
