III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, digital alloy growth by molecular beam epitaxy has been widely adopted in preference to conventional random alloy growth because of the extra degree ...

Titanium silicide grows on silicon in a form of discontinuous layers, which is the most serious obstacle to the formation of high-quality epilayers for VLSI applications. At the same time, nanometric dimensions of the epitaxial silicide islands attract interest as quantum nanostructures. However, for this purpose, nanocrystals in a self-assembled array have to be defect-free, and exhibit high s...

As indicated in the opening article of this issue [11 thin epitaxial films of some III-Y semiconductors have properties which are important in high-frequency and optoelectronic applications. Such films can be prepared by conventional growth techniques such as liquid-phase epitaxy (LPE) or vapour-phase epitaxy (YPE). For particular applications it may be advantageous to use metal-organic vapour-...