Highly c-axis-oriented (Sr,Ba)Nb2O6 (SBN) films were grown on a seeded MgO(100) substrate via sol-gel method. The substrate was preseeded with epitaxial islands of SBN made by breaking up a continuous film into single-crystal islands by pores. Since the number of epitaxial nuclei was increased at the interface between the film and the substrate, the film on a seeded substrate had better highly ...

Epitaxial transition metal films have recently been introduced as substrates for the scalable synthesis of transferable graphene. Here, real-time microscopy is used to study graphene growth on epitaxial Ru films on sapphire. At high temperatures, high-quality graphene grows in macroscopic (>100 μm) domains to full surface coverage. Graphene nucleation and growth characteristics on thin (100 nm)...

A strained epitaxial film often undergoes surface roughening during growth and subsequent processes. One possible means to reduce roughening so as to produce an epitaxial film with a flat surface is to deposit an oxide cap layer on the film to suppress the kinetic process of roughening. This paper analyzes the effect of a cap layer on the stability of an epitaxial film and the kinectics of roug...

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InNJ(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the inter...

Local electronic properties in AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometerto micron-scale...

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial het...

The growth of InSb nanowires on an InSb(1 1 1) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 1C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80–200 nm and they consisted of nearly equal atomic percent of In and Sb. Transmission ele...

Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and m...