نتایج جستجو برای: electric breakdown of gases
تعداد نتایج: 21182127 فیلتر نتایج به سال:
It is shown that in the SU(2) Yang Mills Higgs theory with broken gauge symmetry a flux tube solution filled with a color longitudinal electric field exists. The origin of the gauge symmetry breakdown for this case is discussed.
RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi...
The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized resistance without the need of an external magnetic field. However, when reducing device dimensions or increasing current density, abrupt breakdown state occurs with a relatively small critical current, limiting applications QAHE. We investigate mechanism this by studying multi-terminal devi...
Many perceive electric vehicles (EVs) to be ecoenvironmentally sustainable because they are free of emissions of toxic and greenhouse gases to the environment. However, few have questioned the sustainability of the electric power required to drive these vehicles. This paper presents an in-depth study that indicates that massive infusion of EVs to our society in a short time span will likely cre...
The paper considers abnormal operation modes of an electric drive power subsystem with permanent magnet synchronous motor (PMSM), such as breakdown and burnout of IGBT-transistor in the three-phase inverter. The effect of these faults on the spectrum and form of the currents in the windings of the synchronous motor was studied. Heuristic algorithms based on the form features of the winding curr...
A low effective oxide thickness of 1.45 nm was achieved in HfAlO films deposited by an electron beam gun evaporator on unheated p-Si substrate. A reduction of the leakage current density from 1 · 10 4 to 4.5 · 10 7 A/cm, at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra thin films. 2004 Elsevier Ltd. All rights reserved.
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