نتایج جستجو برای: doping control

تعداد نتایج: 1353503  

2007
Andrea Petróczi

BACKGROUND For effective deterrence methods, individual, systemic and situational factors that make an athlete or athlete group more susceptible to doping than others should be fully investigated. Traditional behavioural models assume that the behaviour in question is the ultimate end. However, growing evidence suggests that in doping situations, the doping behaviour is not the end but a means ...

This paper investigates the amount of doping concentration in silicon semiconductor using optical principle.  Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...

Journal: :Physical review letters 2008
S Y Zhou D A Siegel A V Fedorov A Lanzara

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator, is one of the key challenges of modern electronics. By employing angle-resolved photoemission spectroscopy we find that a reversible metal to insulator transition and a fine-tuning of the charge carriers from electrons to holes can be achieved in epita...

2014
Hugo Pinto Alexander Markevich

Many potential applications of graphene require its precise and controllable doping with charge carriers. Being a two-dimensional material graphene is extremely sensitive to surface adsorbates, so its electronic properties can be effectively modified by deposition of different atoms and molecules. In this paper, we review two mechanisms of graphene doping by surface adsorbates, namely electroni...

2012
Y. H. Wang D. Hsieh E. J. Sie H. Steinberg D. R. Gardner Y. S. Lee P. Jarillo-Herrero N. Gedik

Two types of single crystal Bi2Se3 samples are prepared which allow us to span the surface doping range investigated in the main text. For the high doping level samples where ED = 0.28 eV below EF , stoichiometric mixture of Bi and Se are used. And for the low doping level samples where ED = 0.06 eV, the initial mixture of Bi:Se = 2:4.06 are used. ED in between these two levels are tuned throug...

Journal: :Clinical journal of sport medicine : official journal of the Canadian Academy of Sport Medicine 2014
Anna Loraschi Nicola Galli Marco Cosentino

OBJECTIVE To explore use and attitudes toward drugs and dietary supplements (DS) and knowledge concerning doping in cycling. DESIGN Retrospective cross-sectional study. SETTING Professional cycling. PARTICIPANTS Elite under-23 male cyclists. INTERVENTION Anonymous semistructured questionnaire administered during race periods. MAIN OUTCOME MEASURES Use and attitudes toward DS and drugs...

2015
Yuhang Wang Kehan Zhao Xiaolan Shi Geng Li Guanlin Xie Xubo Lai Jun Ni Liuwan Zhang

The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interact...

2014
S. Yazdi A. Berg T. Kasama M. Beleggia M. T. Borgström

Semiconductor nanowires (NWs) are very promising building blocks for future electronic and optoelectronic devices. Realizing this, nevertheless, requires overcoming several important challenges, such as control and evaluation of doping levels in NWs. Due to the nanoscale nature of NWs, characterization techniques, such as Hall effect measurements and four-point probes, used conventionally for t...

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