In this paper, a rapid and room temperature electrochemical method is introduced in preparationof Ni doped iron oxide nanoparticles (Ni-IONs) grafted with ethylenediaminetetraacetic acid (EDTA)and polyvinyl alcohol (PVA). EDTA/Ni-IONs and PVA/Ni-IONs samples were prepared through baseelectro-generation on the cathode surface from aqueous solution of iron(II) chloride, iron(III...

The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no elect...

Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, moly...

We have theoretically investigated the effect of doping in oligothiophenes (Tn, n=2-8) with the DFT method at UB3LYP level with 6-31G(d) basis set. Our attention focused on the study of the geometrical and electronic properties in the neutral and doped states. We show that the doping process modify both bond lengths and torsion angles and also electronic properties by enhancing the planarity an...

The long-term stability of halide perovskite solar cells (PSCs) remains the critical problem this photovoltaic technology. Different structural defects formed in thin-film films were considered as a main trigger for decomposition absorber and corrosion interfaces device structure. changes performance PSCs require detailed analysis generated under external stress (light heat). Using admittance, ...

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...

The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several poin...

Carrier doping of graphene is one of the most challenging issues that needs to be solved to enable its use in various applications. We developed a carrier doping method using radical-assisted conjugated organic molecules in the liquid phase and demonstrated all-wet fabrication process of doped graphene films without any vacuum process. Charge transfer interaction between graphene and dopant mol...

This paper reports experimental study on the development of cadmium tungstate scintillator material in the form of nanocrystal films through controlled sol–gel processing and pre-designed doping. We chose cadmium tungstate as a base material for doping and nanostructure development due to its excellent inherent photoluminescence (PL) property, and chemical and thermal stability including non-hy...