نتایج جستجو برای: dopant

تعداد نتایج: 4461  

1999
V. Ramachandran

Magnesium incorporation during the molecular beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based on the two different sets of reconstructions seen on the film prior to and after about 1 monolayer Mg exposure. The inversion boundary is seen to lie on the (0001) plane from transmission electron microscopy images, an...

2013
Georg T. Becker Francesco Regazzoni Christof Paar Wayne P. Burleson

In recent years, hardware Trojans have drawn the attention of governments and industry as well as the scientific community. One of the main concerns is that integrated circuits, e.g., for military or criticalinfrastructure applications, could be maliciously manipulated during the manufacturing process, which often takes place abroad. However, since there have been no reported hardware Trojans i...

2009
Jum Suk Jang Joowook Lee Heechang Ye Fu-Ren F. Fan Allen J. Bard

Journal: :Journal of Cryptographic Engineering 2015

2011
F. A. Selim M. C. Tarun D. E. Wall L. A. Boatner M. D. McCluskey

Zinc oxide single crystals were doped with copper acceptors by means of the nuclear transmutation doping method, which gives highly uniform dopant distributions and has a much higher probability of controlling the dopant locations in the lattice. The Cu doping was confirmed by the infrared absorption signature of Cu2þ at 5780 cm . Hall-effect measurements were performed to study the effect of C...

Journal: :Physical review letters 2000
Dalfovo Mayol Pi Barranco

Using a density functional method, we investigate the properties of liquid 4He droplets doped with atoms (Ne and Xe) and molecules ( SF6 and hydrogen cyanide). We consider the case of droplets having a quantized vortex pinned to the dopant. A liquid-drop formula is proposed that accurately describes the total energy of the complex and allows one to extrapolate the density functional results to ...

Journal: :Nano letters 2010
G P Lansbergen G C Tettamanzi J Verduijn N Collaert S Biesemans M Blaauboer S Rogge

The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the silicon valleys, an exotic and hithe...

Journal: :Physical review letters 2005
Tamara S Nunner Brian M Andersen Ashot Melikyan P J Hirschfeld

A comparison of recent experimental STM data with single-impurity and many-impurity Bogoliubov-de Gennes calculations strongly suggests that random out-of-plane dopant atoms in cuprates modulate the pair interaction locally. This type of disorder is crucial to understanding the nanoscale electronic inhomogeneity observed in BSCCO-2212, and can reproduce observed correlations between the positio...

Journal: :Physical review letters 2006
Yong-Hyun Kim Yufeng Zhao Andrew Williamson Michael J Heben S B Zhang

First-principles density functional and quantum Monte Carlo calculations of light-element doped fullerenes reveal significantly enhanced molecular H2 binding for substitutional B and Be. A nonclassical three-center binding mechanism between the dopant and H2 is identified, which is maximized when the empty p(z) orbital of the dopant is highly localized. The calculated binding energies of 0.2-0....

Journal: :Microscopy 2013
David Cooper Rafal E Dunin-Borkowski

An approach is presented that allows independent determination of the mean inner potential contribution to a phase image of a highly doped layer in a semiconductor measured using off-axis electron holography, in order to quantify the contribution to the recorded phase from the dopant potential alone. The method takes into account the possible presence of both substitutional and interstitial dop...

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