نتایج جستجو برای: detectivity
تعداد نتایج: 428 فیلتر نتایج به سال:
Semiconducting single-walled carbon nanotubes (s-SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s-SWNTs seriously impedes the development of s-SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s-SWNTs and γ-graphdiyne. The hetero...
van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic ap...
Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate su...
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahi...
Molecular beam epitaxy of InAs/GaAs quantum dots and their subsequent transformation to quantum rings by postepitaxy thermal annealing have been investigated. Photoconductive detectors with multiple quantum ring layers in the active region exhibit dark current density 10−8 A /cm2 at a bias of 2 V at 4.2 K. The rings have a single bound state, and emission of photoexcited carriers gives rise to ...
We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH3[CH2]17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and ...
In this paper, we describe an infrared thermopile sensor comprising of single crystal silicon p+ and n+ elements, with an integrated diode temperature sensor fabricated using a commercial SOI-CMOS process followed by Deep Reactive Ion Etching (DRIE). The chip area is 1.16 mm × 1.06 mm. The integrated diode, being on the same substrate, allows a more localized measurement of the cold junction te...
We investigated the use of plasmonic nanotechnology to enhance the performance of semiconductor infrared detectors. An increase of quantum efficiency, responsivity and specific detectivity is obtained by applying transparent conductive oxide (TCO) nanoparticles onto the surface of a photodetector. To this purpose we considered uncooled mercury cadmium telluride (HgCdTe) photoconductive detector...
High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high...
The detectivity D* limits of YBa(2)Cu(3)O(7-x) bolometers on 0.05-cm-thick crystalline substrates are investigated, and a method to increase D* to greater than 10(9) (cm Hz(1/2))/W at a 20-microm wavelength is proposed. Because the response increases proportionally with the bias current I(b), whereas the noise near T(c) (the transition or critical temperature) of our MgO and SrTiO(3) substrate ...
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