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A novel contact-first approach for III–V FinFETs and trigate MOSFETs is presented. In this process, the metal contact is sputtered on the as-grown semiconductor heterostructure, and the contact metal is used as a part of the fin dryetch mask. We demonstrate this technique in Mo/n+-InGaAs contact structures with fin widths in the range of 50 to 300 nm. We have measured contact resistance in the ...

Among various dissipating mechanisms, the viscoelastic effect of rubber material on creation of rolling resistance is responsible for 10-33% dissipation of supplied power at the tire/road interaction surface. So, evaluating this kind of loss is very essential in any analysis concerned with improving the fuel consumption of vehicles and resultantly energy savage. Hysteretic loss is a fraction of...

Circuit Breakers (CBs) are critical components in power system for reliability and protection. To assure their accurate performance, a comprehensive condition assessment is of an imminent importance. Based on dynamic resistance measurement (DRM), this paper discusses a simple yet effective fuzzy approach for evaluating CB’s electrical contacts condition. According to 300 test results obta...

in this study; utilizing the elastic matrix ball has higher processing efficiency and better superficial quality than traditionalgrinding. the diversity of elastic abrasive tool characteristics contact with bend surface results in irregular wear abrasion，and abrasive tool machining status gets complicated. there is no theoretical interpretation of parameters affecting the grinding accuracy. bec...