نتایج جستجو برای: conduction band nonparabolicity

تعداد نتایج: 169137  

Journal: :Physical review letters 2007
William K Liu Kelly M Whitaker Alyssa L Smith Kevin R Kittilstved Bruce H Robinson Daniel R Gamelin

Conduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g(*)=1.962 and a room-temperature ensemble spin-dephasing time of T(2)(*)=25 ns, as determined from linewidth analysis. Increasing the electron population ...

2001
Fredrik Boxberg Jukka Tulkki

We have studied the influence of oxidation-induced strain on the electronic structure in Si quantum wires and quantum point contacts. The strain calculations were done using a semiempirical approximation which enabled three-dimensional (3-D) strain simulations of the device structures. The strain-induced deformation of the conduction band gives rise to a 3-D potential minimum having a depth of ...

Journal: :Optics express 2011
Jiwei Wang Jian Hua Hao Peter A Tanner

A multiphoton process to the conduction band of the insulator Er2O3 is reported, which occurs in vacuum under near infrared excitation. The enormous upconversion intensity is two orders of magnitude greater than that in air, and also the intensity ratio for green and red emission bands is inverted. The mechanism is probed by experiments of laser power dependence, cathodoluminescence, photocondu...

2014
Robert L Z Hoye Bruno Ehrler Marcus L Böhm David Muñoz-Rojas Rashid M Altamimi Ahmed Y Alyamani Yana Vaynzof Aditya Sadhanala Giorgio Ercolano Neil C Greenham Richard H Friend Judith L MacManus-Driscoll Kevin P Musselman

Colloidal quantum dot solar cells (CQDSCs) are attracting growing attention owing to significant improvements in efficiency. However, even the best depleted-heterojunction CQDSCs currently display open-circuit voltages (VOCs) at least 0.5 V below the voltage corresponding to the bandgap. We find that the tail of states in the conduction band of the metal oxide layer can limit the achievable dev...

1997
B. L. Stein E. T. Yu E. T. Croke A. T. Hunter J. W. Mayer C. C. Ahn

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si12xGex and Si/Si12x2yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si12xGex heterostructures and conduction-band and valence-band offsets in Si/Si12x2yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured...

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